Résumé: Different memristive devices have different characteristic curves; how to describe and simulate various kinds of memristive devices with a unified model is still a significant work. In this work, a new memristor model is presented—DSAM, drift speed adaptive memristor model. This model is composed of a linear i–v relation function and a speed adaptive state function. A detailed analysis of model parameters’ effect is proposed. It is shown that different parameters perform different drift speed curves, which can be adjusted to describe various memristive devices. The proposed model can also adapt to various voltage inputs. Finally, the model is tested in fitting different memristor devices with an average error of less than 5.5%.

Langue: Anglais