Résumé: The admittance analysis method has been used to calculate the collection e .ciency and the short circuit current density in a- Si: H p- i- n Solar cell, as a function of the thickness of i- layer. It is evident that the results of the short circuit current can be used to determine the optimal thickness of the i- layer of a cell, and it will be more accurate in comparison with previous studies using a constant generation rate or an empirical exponential function for the generation of charge carriers throughout the i- layer.

Langue: Anglais