ملخص: The present paper describes a frequency:dependent substrate current model generated in an nMOS device in the form of diode or transistor when pulsed by a train of square wave pulses. The proposed model is based on the theory of carrier capture and emission from the oxide traps and the interface states of the MOS system.The substrate current is measured under appropriate experimental conditions of biasing and pulsing. It has been found that this current is positive and of a typical behavior when it is plotted with respect to gate signal frequency variation. The overall current versus frequency shape is identical for different gate voltage amplitudes and different types of experimental devices. The current behavior has been studied for different amplitudes and critical frequencies; it has been found that it can be used for the electrical characterization of the silicon dioxide and silicon/silicon dioxide interface.The theoretical model is found to suite globally the gate current behavior that has been observed experimentally.

لغة: إنجليزية