ملخص: In this work we develop a submicronic transistor model (narrow and short channel) to study MOSFET's ageing using the charge pumping technique. In this model, implemented in SPICE3F4, a majority of physical effects have been incorporated for the different functioning regions. They concern the reduction mobility effect, the carriers velocity saturation, the channel length modulation, the short channel effect, the threshold voltage variation with the reverse bias voltage (Vrev), and the distribution of the interface states. The results obtained are compared to other theoretical and experimental results.

لغة: إنجليزية