ملخص: The purpose of this paper is to characterize interface states in Au/InSb/InP(1 0 0) Schottky:type diodes and determine the effect of InSb surface preparation on the energy density distribution and relaxation time of the interface state. In the latter diode, InSb forms a fine restructuration layer allowing to block In atoms migration to surface. We have proceeded as follows: first, a great amount of antimony has been evaporated and, as a second step, the excess antimony is removed by heating the substrate at 300[deg]C. The characteristic parameters of the interface states are derived from the capacitance:voltage C(VG), conductance:voltage G(VG) measured as a function of frequency and current:voltage I(VG) under forward biases. The mean density of interface states Nss estimated was 3.05 x 1012 eV:1 cm:2, the interface states were responsible for the non:ideal behavior of the I(VG) characteristics of the diodes. The relaxation times are independent of the bias and varies with Nss in the range 7.1 x 10:4 s and 3.7 x 10:3 s.

لغة: إنجليزية