Résumé: Cross:sectional transmission electron microscopy was used to study the effect of doped silicon substrate on the formation of CrSi2 disilicide. A chromium film 800 A thick was electron gun deposited onto unimplanted and phosphorus implanted Si(111) substrates. The implanted dose was 5 x 1015 at. cm:2 at 30 keV. The Cr:Si samples were heat treated in vacuum at 475[deg]C for different times. Transmission electron microscopy investigations, performed on doped and undoped Si substrates, have shown that the presence of P+ ions resulted in the delay of the CrSi2 compound growth. In addition, the nanoanalysis of the samples with P+ implanted silicon has revealed the apparition of a crystalline Si:Cr alloy in the Si substrate near the CrSi2:Si interface, the formation of an amorphous Si thin layer between the formed silicide and this alloy, and a diffusion of Si atoms towards the free surface.

Langue: Anglais