Résumé: Fe has been sequentially deposited under ultra:high vacuum, from less than 1 ML up to over 120 ML (1 ML refers to the GaSe surface, [approximate]8 x 1014 atoms/cm2), onto the clean (001) passive face of a 10:nm thick ([approximate]12 layers) GaSe film epitaxially grown by MBE onto a Si(111)1 x 1-H substrate and kept at room temperature. From low:energy electron diffraction (LEED), Auger electron spectroscopy (AES) and photoemission yield spectroscopy (PYS) measurements, a model in which Fe atoms intercalate into the layered semiconductor at room temperature is proposed. It assumes the formation of a ternary compound, which maintains the GaSe surface structure until saturation of the whole layered film by intercalated Fe, which would involve two Fe monolayers per pseudo:van der Waals gap.

Langue: Anglais