ملخص: Zinc oxide films were grown on SiO2/Si substrate. The growths were performed using pulsed laser deposition at a moderate substrate temperature (500 [deg]C). PLD ZnO/SiO2/Si indicated a very well c:axis orientation. Micro:Raman and FTIR measurements were indicated vibrations modes of wurtzite structure and no evidence of defect density. Brillouin light scattering (BLS) measurements were performed to study the acoustic properties of ZnO films. A laser light source (514.5 nm) probe revealed acoustic phonons of about 300 nm wavelength. The BLS spectra revealed Rayleigh (R) and a number of guided Sezawa modes (Si) in ZnO thin films. The Si modes have high velocities and are polarised in the sagittal plane. Consequently, radio frequency (GHz) SAW devices could be fabricated using ZnO thin films on SiO2/Si with great potential for use as SAW devices which can be readily integrated with Si:based semiconductor technology.

لغة: فرنسية