ملخص: We have investigated the chemical trends of the III-V semiconductor InP in the zinc-blende structure under hydrostatic pressure by means of empirical pseudopotential calculations. The pressure coefficients of the main band gaps (at [Gamma], X, and L) are given and compared with the available experimental data. In agreement with experiments, we find that the transverse effective charge decreases with increasing pressure which indicates the increased covalent bonding in the studied material.

لغة: إنجليزية