ملخص: An investigation of the surface morphology and microstructure of sputtered amorphous silicon films deposited with different rf powers is reported. Both transmission and scanning electron microscopy observations indicate the presence of a polycrystalline layer at the free surface of films prepared at high rf power. The surface and bulk dark conductivities were determined using the three-contact method. The results confirm the presence of a polycrystalline layer at the free surface of the films. In order to understand the microstructure evolution from the film--substrate interface to the free surface, a growth model is suggested based on the substrate heating caused by the species from the plasma bombardment and the thermal conduction of the substrate.

لغة: إنجليزية