ملخص: H2+ ion implantations were performed at 80 KeV and different doses on pure aluminium samples with a 4 MV VDG accelerator. An exact determination of the hydrogen amount implanted is allowed by the use of the elastic recoil detection technique with 2.5 MeV 4He+ beam, prior to which the optimization of the ERDA experimental parameters is discussed. Typical application for hydrogen profiling in a-Si:H is presented. The lattice strain variation in implanted AI samples upon the hydrogen concentration is determined using transmission electron microscopy together with the ERDA technique.

لغة: إنجليزية