ملخص: Sub-micron thin films of polycrystalline silicon obtained by low-pressure chemical vapor deposition, boron-implanted (amount varying from 1012 to 1016 cm-2), and annealed at 760 [deg]C for 26 h under an oxygen ambient (dry O2) have been characterized in terms of structural and electrical properties. The results obtained are correlated first with the Hall-effect measurements, which gives the resistivity p, the concentration of the free carriers p and the mobility [mu], and in the second part with the observations of transmission electron microscopy (TEM), which gives the size of grains. The variations of p, p and [mu] have been studied as a function of the dopant concentration. A low rate of activation has been measured (40%) and a very low value of the mobility [mu] has been noted (3 cm2 V-1 s-1) as well as small grain size. These results have been discussed both qualitatively and quantitatively, based on the existence of phenomena of carrier trapping and dopant segregation at the grain boundaries.

لغة: إنجليزية