ملخص: CuFeSe2, which belongs to the I II IV2 chalcogene family, has been prepared in thin films form by selenization of CuFe precursor.Cu/Fe/Cu... thin layers have been sequentially deposited by vacuum evaporation on a substrate heated at a temperature Ts = 450 [deg]C. It has been checked by X-ray photoelectron spectroscopy (XPS) that there is Cu, Fe interdiffusion in the precursor. Since the samples are exposed to air there is some copper and iron oxidation at the surface, but there is no oxygen in the bulk.These precursors are selenized in a vacuum chamber using a Se source (evaporation rate 3-4 nm s-1). The selenization duration is 45 min. At the end of the process the structure of the film is the expected tetragonal structure of CuFeSe2. The XPS study shows that there is no oxygen contamination of the film, excepted the surface because it has been exposed to air. The composition measured is in good agreement with that measured by electron microprobe analysis. The binding energies measured show that there is, as expected, some electron transfer from metals to the chalcogene, with Cu 2p3/2 = 932.60 eV, Fe 2p3/2 = 708.15 eV and Se 3d = 53.90 eV.

لغة: إنجليزية