ملخص: The present paper deals with dangling bonds creation in a-Si:H thin films under continuous light illumination with moderate intensity. Taking into account the equilibrium conditions of defect density given by the defect pool model, we propose that hydrogenated dangling bond is the dominant defect in good quality a-Si:H samples and the recombination occurs not only at weak SiSi bonds but also at SiHHSi configurations. The obtained dangling bonds creation kinetic according our model is in good agreement with experiments.

لغة: إنجليزية