ملخص: Quantitative XPS analysis was used to examine the modification in a thin silica surface of its stoichiometry by the determination of nO/nSi atomic ratios after Ar+-ion and He+-ion bombardment under the fixed conditions of 1 keV energy and 1.5 x 1016 ions cm-2 fluence for Ar+-ions; and 3 keV and x 1017 ions cm-2 fluence for He+-ions. The qualitative information, under the above conditions, shows that there is an evidence of the line width (or FWHM) stability. This effect is from conservation of chemical environment around the silicon atoms, resulting from the summation weighted over different local atomic environments. In addition, after this examination, the surface is annealed at 500 [deg]C for 1 h in a way that a silica surface can be restored eventually. This operation shows that the previous surface is not disturbed under ion-beam treatment and thus the silica surface remains undamaged.

لغة: إنجليزية