ملخص: A chromium layer was evaporated on single-crystal silicon wafers ions implanted with phosphorus at 40 keV to doses of 5 x 1014 and 5 x 1015 atm cm-2. Interface reaction was followed by Rutherford backscattering spectroscopy and X-ray diffraction analysis. In order to investigate the charge carrier transport mechanism across the Cr/Si interface, I-V and C-V characteristics were measured in Cr/Si samples thermally annealed at 475[deg]C and 550[deg]C for a variety of time lengths. The degradation of Cr/Si structures deviating from Schottky barriers behavior is noted and the p-type conductivity of CrSi2 was confirmed.

لغة: إنجليزية