ملخص: In this work, we present the C(V) capacitance characteristics of metal/polysilicon/silicon oxide/monosilicon (MSPOS) structures. From the obtained C(V) curves, we have studied the behavior of the capacitance at high frequency, the effect of the monosilicon doping on the C(V) characteristics and extracted the physical and technological parameters of the structure. The shape of the obtained curves is different from the classical C(V) characteristics. The curve presents a combination of two C(V) characteristics of the MOS and MOSP structures. One result was with positives bias voltages, the other with negative voltages. For a substrate doping concentration NDm=1018 cm-3, the characteristic presents more important capacitance variation compared to one with NDm=1016 cm-3.

لغة: إنجليزية