ملخص: In this work, we measure the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics of the Au/InP(100) and Au/InSb/InP(100) Schottky type diodes. The InP(n) substrate is restructured by some monolayers of the InSb thin film. We then propose a study of the electrical quality of the elaborated components after the Au/InP interface creation; first without annealing and then after annealing by heating at 500[deg]C temperatures. Analysis of the measured I(V) characteristics for the Au/InP and Au/InSb/InP samples allows the determination of the electrical parameter variations. The saturation current Is, the serial resistance Rs, the mean ideality factor n and also the barrier height [phi]Bn, are respectively equal to 2.10 x 10-4 A, 19 [Omega], 1.8 and 0.401 eV for the Au/InP sample and equal to 1.34 x 10-7 A, 175 [Omega], 1.78 and 0.592 eV for the Au/heated InSb/InP. Another good result is that the analysis and simulation of the I(V) and the C(V) characteristics allows us to determine the very important mean interfacial state density Nss(mean), and is obtained to be equal 4.23 x 1012 eV-1 cm-2 for the Au/InP sample and equal to 4.42 x 1012 eV-1 cm-2 for the Au/heated InSb/InP. This work thus permits the evolution study of these electrical parameters related to the restructuration conditions.

لغة: إنجليزية