ملخص: A complicated three-dimensional system (x, y, z) is rigorously analysed in this work enabling one to calculate the photoluminescence intensity (IPL) of semiconductor compounds. A number of methods have been devised whereby numerical solutions of the diffusion equation can be obtained. This three-dimensional model is necessary in measurements of photoluminescence at a high resolution which only needs a very small excitation spot. We show examples of our calculation on semiconductor compounds and demonstrate the difference with the results in a unidimensional system, explained by the effect of lateral diffusion. The data obtained are treated and give several internal structural parameters. Our three-dimensional model can be applied to substrate, epitaxial and SOI (silicon-on-insulator) structures.

لغة: إنجليزية