ملخص: The recent development of the manufacturing technology of (SOI) TMOS integrated circuits promoted by the fundamental advantages of dielectric insulation have stimulated the thin film SOI TMOS modeling. An accurate model which takes into account the structural unity of the component is then necessary for Computer-Aided Design (CAD). In this work we propose an SOI TMOS model taking into account the effects related to the small geometry. This model has been implemented in SPICE3 simulator.

لغة: إنجليزية