ملخص: This work attempts to characterize the Au/InP Schottky diode at different temperatures (in the range 300-425 K). The InP surface is restructured with an InSb thin film with several monolayers. I(V) analysis versus different temperatures gives the saturation current variation Is (2 x 10-5-7 x 10-5 A), the mean ideality factor (1.7-1.24), the barrier height (0.47-0.45 V), and finally the serial resistance Rs variations (85-19 [Omega]). The doping concentration Nd and the diffusion voltage Vd are calculated using the C(V) characteristics. The concentration Nd is 3 x 1015 cm-3 at room temperature and increases with thermal activation to 7 x 1015 cm-3 at 425 K. Nevertheless, the diffusion voltage Vd is reversibly proportional to the doping concentration Nd and decreases from 33.7 x 10-2 to 29 x 10-2 V. The mean interfacial state density Nss decreases with increasing temperature, from 4.33 x 1012 to 1012 cm-2.eV-1. This improvement is the result of molecular restructuring and reordering at the Au/InP interface. For temperatures less than 375 K, the C(V) characteristic is controlled by an important interfacial state density and/or the presence of deep donor levels in the semiconductor bulk. At temperatures greater than 375 K, the C-2(V) curve is linear and the deep donor levels disappear. The traps effect is also reduced.

لغة: إنجليزية