ملخص: In this paper, characteristics of BiCMOS and MOS current mirrors are presented. Through comparisons, relative trade-offs in the use of various circuit configurations are shown. Each of the characteristics was investigated using the HSPICE tool, and the 0.8 [mu]m BiCMOS process with a nominal transit frequency [function of (italic small f)]t of 12 GHz for the bipolar devices

لغة: إنجليزية