ملخص: We have obtained the electron and positron band structure and charge densities in InxGa1-xSb from wavefunctions derived in a model pseudo-potential bandstructure calculation coupled with the virtual-crystal approximation which incorporates compositional disorder as an effective potential. We find that the electron is more sensitive to the method used than the positron. The results are used to analyze the dependence of the positron effect in semiconductor alloys.

لغة: إنجليزية