ملخص: Films of a-SiC:H have been prepared by sputtering of a silicon target with a small disc of triphenylphosphine (TPP) placed over the central region of the target. The triphenylphosphine is used as the feedstock of carbon and phosphorus. The optical and electrical characterizations reveal a reduction in both the optical gap and the activation energy and an increase in the dark conductivity for the obtained a-SiC:H film, as compared with films deposited without triphenylphosphine. This suggests that triphenylphosphine can be used as a dopant for preparation of a-SiC:H films.

لغة: إنجليزية