ملخص: The amorphization of silicon during low-energy ion implantation has been investigated in the ion energy range from 0.5 to 3 keV. The ion bombardment was performed with Ar ions at samples cooled down to 150 K. The damage formation process was observed by single-wavelength ellipsometry. Critical energy densities are presented and compared with preceding measurements at 300 K. The results are discussed in relation to Sigmund's energy density in spikes. The comparatively low critical energy densities obtained (0.5 to 3.6 x 1023eV cm-3, corresponding to about 1 to 7 eV/atom) show the dominant role of the spikes in this energy range.

لغة: إنجليزية