ملخص: A simple tight-binding sp3s* model, which incorporates compositional disorder as an effective potential, is used for the calculations of the electronic structures of the semiconducting alloys AlxGa1 - xAs and GaPxAs1 - x. Our results for various interesting quantities, including band-gap bowings and crossover of the band gaps of these two systems, are compared with the available data; a good agreement is found.

لغة: إنجليزية