ملخص: Oxygen interaction with hydrogenated amorphous silicon a-Si:H thin films is studied using conductance measurements and X-ray photoelectron spectroscopy (XPS) analysis. Oxygen adsorption on an a-Si:H surface at 160 [deg]C gives a reversible variation of the conductance. The before-adsorption conductance value is restored after desorption at 220 [deg]C. XPS analysis of the film surface shows the presence of a thick film (~ 10 a) of silicon bonded to 1, 2, 3 or 4 oxygen. These results are explained by the effect of a negative charge induced at the surface. This charge depends on the equilibrium between the different oxidation states of the amorphous silicon surface detected by XPS measurements.

لغة: إنجليزية