ملخص: The band structure of InxGa1-xSb Alloy is calculated in the virtual crystal approximation using the empirical pseudopotential method which incorporates compositional disorder as an effective potential. Various quantities including the bowing parameter of fundamental gap, the energies of several optical gaps for the alloy InxGa1-xSb under pressure are calculated. These results are in excellent agreement with the dielectric ionicity theory.

لغة: إنجليزية