ملخص: Starting from band structures of the constituent materials, the electronic band structure of the semiconducting alloys GexSn1-x and SixSn1-x are calculated by the empirical pseudopotential method using a corrected virtual crystal approximation (VCA) which incorporates compositional disorder as an effective potential. Various quantities, including the bowing parameter of the fundamental band gap, the energies of several optical gaps, and the crossover of the band gaps are predicted.

لغة: إنجليزية