ملخص: Thin [beta]-FeSi2 layers have been prepared by ion beam synthesis (IBS) on (1 1 1)Si substrates. The obtained samples have been characterized by means of infrared and Raman spectroscopies. The infrared (IR) transmittance spectra show the absorption at 310 cm-1 as an indication of the initial nucleation of [beta]-FeSi2 precipitates during the implantation of iron into silicon substrate. The main feature of the photoluminescence (PL) measurements at 12 K in the [beta]-FeSi2/(1 1 1)Si samples annealed at 850 [deg]C for 90 min is an intense peak localized at 0.811 eV. This peak is assigned to optical radiative transitions intrinsic to [beta]-FeSi2.

لغة: إنجليزية