ملخص: This work deals with the numerical application of the Space Charge Limited Currents (SCLC) phenomenon on n+in+ structures of amorphous silicon. The aim was to develop a framework to validate, through the j-v characteristic, density of states (DOS) profile corresponding to a genuine effect of disorder in this kind of material. This work permitted to get an insight into the phenomenon involved in its different aspects, therefore, to state a generalised treatment and recognise different j-v characteristics from a variety of DOS functions.

لغة: إنجليزية