ملخص: A buried layer of iron disilicide was synthesized by ion implantation in (1 1 1) Si p-type maintained at 500 [deg]C using 195 keV Fe ions with a dose of 2 x 1017 at./cm2, followed by annealing in a N2 atmosphere at 850 [deg]C for 90 min. The investigation of the phase composition is carried out by Rutherford backscattering spectrometry (RBS), whereas the structural characterization is obtained by means of both X-ray diffraction (XRD) pole figure and cross-sectional transmission electron microscopy (XTEM). The precipitates favor epitaxial growth with respect to (1 1 1) Si planes with epitaxial relationships (2 2 0) [beta]-FeSi2||(1 1 1) Si and/or (2 0 2) [beta]-FeSi2||(1 1 1) Si. A mixture of [beta]-FeSi2 and [alpha]-FeSi2 silicides is observed in the as-implanted state. After annealing of the samples at 1000 [deg]C, the XRD pole figures show the transition from [beta]-phase to [alpha]-phase.

لغة: إنجليزية