ملخص: We investigate the electrochemical behaviour, in the dark, of hydrogenated n-type silicon (n-Si (H)) as function of the plasma hydrogenation duration. We also study the pore size microstructures and the flat band potential (Vfb). The results are compared with non-hydrogenated n-Si. An electrochemical reactionary mechanism is proposed and model is developed to explain these results.

لغة: إنجليزية