ملخص: The aim of this work is to experimentally investigate the effect of series resistance on the non-ideal silicon Schottky diode (SSD), in our process fabrication. Two types of diodes, with high resistivity silicon bulk, Al/n-Si and Al/p-Si have been prepared. The parameter RS, the ideality factor n and the barrier height [phi]B0 are determined by performing different plots from the experimental forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) measurement. The high resistivity Schottky diode is currently used in nuclear detection, we tested these junctions in [alpha] particle spectrometry and measured their energy resolution.

لغة: إنجليزية