ملخص: The effect of the phosphorus on the microstructure and on the nature of the formed silicide in the annealed Cr/Si system is studied. The chromium layer is deposited by electron gun evaporation on the undoped and P+ doped monocrystalline silicon. Cross-sectional transmission electron microscopy (XTEM) investigation of the samples, annealed at 475 [deg]C for different times, shows that the presence of phosphorus leads to the formation of CrSi2 disilicide, free of defects, and Cr3Si silicide for lower and higher annealing times, respectively.In the case of undoped substrate the formed CrSi2 disilicide is stable and contains a high concentration of stacking faults when the chromium is partially consumed.

لغة: إنجليزية