ملخص: Silicon Schottky photodiode is a good candidate for UV-Vis light detection and ideal for high speed applications, where it has many advantages. One of them is the inherent absence of any component associated with minority carrier effects, and it appears to have a good quantum efficiency in the UV-Vis spectral range. In this work, Schottky contact of different gold thickness film was fabricated by thermal evaporation on highly resistive n-type silicon. A thin gold layer (Au) around 10 nm was used to fabricate the Schottky photodiode which has a good optical properties. These results show a good spectral response value of 0.014 and 0.22 A/W at 350 and 550 nm wavelength, respectively. The results were obtained under 0 V reverse bias voltage and without using an anti-reflection coating. A second measure of the spectral response taken after storing the photodiode in air for several days (30 days) shows a decrease of about 20-50% from the initial value. The decrease was due essentially to the diffusion of lithium from the back side to the front side. In addition, to the absence of surface photodiode edge protection.

لغة: إنجليزية