ملخص: Based on the pseudopotential scheme, the hydrostatic pressure dependence of the electronic properties has been predicted for zinc-blende ZnS. The material of interest is found to exhibit features of both direct and indirect band-gap semiconductor depending on the applied pressure. Detailed plots of the valence charge distribution along the [1 1 1] direction and in the (1 1 0) plane at different pressures are also presented and discussed.

لغة: إنجليزية