ملخص: The sub-band spin splitting of the energy levels due to spin-orbit and the strong surface electric field is computed self-consistently for electrons in InAs mosfets using the envelope function approximation and the 8 x 8 Kane Hamiltonian. The concomitant Rashba parameter is studied as a function of areal electron density where at the Fermi level it shows unexpected and counter-intuitive behaviors due to its k-dependence which cannot be neglected.

لغة: إنجليزية