ملخص: We investigated the e.ect of annealing temperature on the electrical activation of phosphorus implanted into silicon. The measurements performed using spreading resistance, four-point probe and ion channeling techniques have allowed us to establish the existence of two domains of variation of the electrical activation (350–700
C) and (800–1100
C). The presence of reverse annealing and the annihilation of defects have been put in a prominent position in the .rst temperature range. It has been shown that in order to achieve a complete electrical activation, the annealing temperature must belong to the second domain (800–1100
C).

لغة: إنجليزية