ملخص: The effects of the energy density distribution and relaxation time of the interface state on electric parameters of Au/InSb/InP(100) Schottky diodes were investigated, in the latter diode, InSb forms a fine restructuration layer allowing to block P atoms migration to surface. To be sure of the disappearance of the In droplets, a high quantity of Sb was evaporated and the excess was eliminated by heating the substrate surface at 300 [deg]C before evaporating Au onto it.The current-voltage I(VG) and capacitance-voltage C(VG) characteristics are measured as a function of frequency (100 Hz-1 MHz). Typical Ln[I/(1-e-qVG/kT)] versus VG characteristics of Au/heated InSb/InP(100) Schottky diode under forward bias show two linear regions separated by a transition segment. From the first region, the slope and the intercept of this plot on the current axis allow to determine the ideality factor n and the saturation current Is evaluated to 1.79 and 1.64 x 10-7 A, respectively.The mean density of interface states estimated from the C(VG) measurements was 1.57 1012 cm-2 eV-1. The interface states were responsible for the non-ideal behavior of the I(VG) characteristics, the capture cross-section [sigma]n for the fast slow varies between 2.16 x 10-11 and 7.13 x 10-12 cm2 for the relaxation times range 7.9 x 10-3-2.4 x 10-2s.

لغة: إنجليزية