ملخص: The effects of surface preparation and annealing on the electrical parameters of Au/InP and Au/InSb/InP Schottky diodes were investigated; in the latter diode, InSb forms a thin restructuration layer allowing the blockage of In atom migration to the surface. The current-voltage characteristics I-VG of these diodes were measured before and after restructuring. The electrical behavior of the components obtained after creation of Au/InP(100) interfaces before and after annealing of the substrate surface at 300 [deg]C was examined. The analysis of the I-VG curves of Au/InP diodes shows a migration of chemical species towards the interface. The electrical characteristic of this contact is ohmic type when the InP surface is heated at 300 [deg]C, and it is of Schottky type with a poor quality and with a height of the potential barrier equal to 0.44 eV when the InP surface is not heated. On the other hand, the Au/InSb/InP contact presents better electrical quality and structural properties when the InSb/InP surface is heated at 300 [deg]C than when it is not. Thus, in the former case, the contact shows high value, about 0.63 eV, for the height of the potential barrier.

لغة: إنجليزية